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Wafer Thinning
- The concept
Back lapping is the
thinning of semiconductor wafers by removing material from the backside
which is the unpolished or unprocessed face. Wafers are often fabricated
thicker than necessary in order to allow the user to trim the material to
the desired thickness and also to give the manufacturer easier tolerances to
deal with at the fabricating stage. Through wafer thinning, the user will be
looking to change the electrical, optical or mechanical properties of the
material to suit their end application. Normally whole wafers are lapped
simultaneously, although it is not uncommon for individual devices or parts
of a wafer to be prepared individually. For example a pre-sawn part being
used in a fibre-optic application may require additional thinning and
polishing to suit it's attachment to the fibre-optic.
Silicon is the most common semiconductor material wafer thinning is
performed on although the process can also be applied to other compound
semiconductors for example gallium arsenide and indium phosphide. Common
applications that require backgrinding are often flip chip related and often
are in used in applications such as card systems, mobile phones and other RF
devices. Lapping may also be needed to guarantee an additional uniformity to
the back surface of the wafer by removing saw marks caused during sawing of
the compound ingot and naturally occurring defects during the compound
growth.
Wafer thinning is a delicate process due to the fragile nature of the
materials in questions. Without expertise and experience it is possible to
overstress the wafer which can lead to cracking and widespread splintering
of the wafer caused by uneven thinning on the back side. To ensure overall
quality and a better yield at saw, the wafer must be de-stressed by a
secondary polishing process. The polishing process removes the distortions
which cause the instability across the wafer thereby de-stressing the wafer.
It is important to have the technical knowledge and experience to account
for the many variables such as wafer size, wafer material, passivation,
desired thickness and reduction ratio. Final thickness requirements can vary
between 0.050 and 0.200 mm, certain processes can also require thinning to
0.010 mm (10 microns). Another important point is to ensure protection of
the active side of the wafer during the removal process.
Wafer thinning - The Process
The active wafer surface is protected by mounting it face first onto a
specialised ultra clean adhesive tape. Using a high-precision polishing
machine, the wafer is then mounted onto a scrolled cast iron plate and the
backside is brought into contact with an abrasive slurry to remove material
from the backside. The slurry is a combination of lapping oil and silicon
carbide or aluminium oxide. For fine finishes aluminium oxide is the
recommended lapping material to apply the finishing polish and remove wafer
stresses. Careful control of wafer loading towards the end of the polishing
process ensures the highest quality finish. The wafers are then washed in a
controlled solution and the protective tape removed from the front of the
wafer.
Wafer thinning - Capabilities
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Up to 8" wafers
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Low stress
finishes #350-#2000
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Bumped and
non-bumped wafers
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Fast
turn-around for volume orders
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